Features and advantages of flexible silicon nanowires for SERS applications

• Hrvoje Gebavi,
• Vlatko Gašparić,
• Dubravko Risović,
• Nikola Baran,
• Paweł Henryk Albrycht and
• Mile Ivanda

Beilstein J. Nanotechnol. 2019, 10, 725–734, doi:10.3762/bjnano.10.72

• allowed hot spots occurrence. Finally, the test with 4-mercaptophenylboronic acid showed excellent SERS performance of the flexible, horizontally oriented SiNWs in comparison with several other commercially available substrates. Keywords: flexible hot spots; horizontal silicon nanowires; 4

• commercially available substrates and that our intention is not to rate or evaluate, but rather the presentation of the first results. Experimental Horizontal silicon nanowires were fabricated by vapor–liquid–solid (VLS) synthesis in a low-pressure chemical vapor deposition (LPCVD) reactor as described in [23

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

• Siti Noorhaniah Yusoh and
• Khatijah Aisha Yaacob

Beilstein J. Nanotechnol. 2016, 7, 1461–1470, doi:10.3762/bjnano.7.138

• semiconductor device with excellent performance depending on the device application [20][21]. Results and Discussion Fabrication of silicon nanowires In this study, AFM lithography was used to fabricate horizontal silicon nanowires on an SOI wafer. AFM lithography is a top-down approach that starts from large